晶湛半導體

A GaN HEMT Structure Allowing Self-Terminated, Plasma-Free Etching for High-Uniformity, High-Mobility Enhancement-Mode Devices Shuxun Lin, Maojun Wang, Fei Sang, Ming Tao, Cheng P. Wen, Bing Xie, Min Yu, Jinyan Wang, Yilong Hao, Wengang Wu, Jun Xu, Kai Cheng, and Bo Shen

IEEE Electron Device Lett. 37, 377 (2016)

Trap behaviours characterization of AlGaN/GaN high electron mobility transistors by room-temperature transient capacitance measurement Bin Dong, Jie Lin, Ning Wang, Ling-li Jiang, Zong-dai Liu, Xiaoyan Hu, Kai Cheng, and Hong-yu Yu

AIP Advances 6, 095021 (2016)

Characterization of trap behaviors in AlGaN/GaN MIS-HEMT via transient capacitance measurement Bin Dong, Jie Lin, Ning Wang, Ling-li Jiang, Zong-dai Liu, Kai Cheng, Hong-yu Yu

2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)