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晶湛半導體

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GaN-on-Si for Power

尺寸:4"/ 6"/8"

 

主要特點:

高擊穿電壓(垂直擊穿電壓>600V)和極低的緩沖區漏電流

良好的均勻性和重復性

高電子濃度、高電子遷移率和低方塊電阻

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